JPH0220141B2 - - Google Patents

Info

Publication number
JPH0220141B2
JPH0220141B2 JP20755683A JP20755683A JPH0220141B2 JP H0220141 B2 JPH0220141 B2 JP H0220141B2 JP 20755683 A JP20755683 A JP 20755683A JP 20755683 A JP20755683 A JP 20755683A JP H0220141 B2 JPH0220141 B2 JP H0220141B2
Authority
JP
Japan
Prior art keywords
film
wiring
etching
organic film
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP20755683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60100451A (ja
Inventor
Takayuki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP20755683A priority Critical patent/JPS60100451A/ja
Publication of JPS60100451A publication Critical patent/JPS60100451A/ja
Publication of JPH0220141B2 publication Critical patent/JPH0220141B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP20755683A 1983-11-07 1983-11-07 半導体装置の製造方法 Granted JPS60100451A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20755683A JPS60100451A (ja) 1983-11-07 1983-11-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20755683A JPS60100451A (ja) 1983-11-07 1983-11-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60100451A JPS60100451A (ja) 1985-06-04
JPH0220141B2 true JPH0220141B2 (en]) 1990-05-08

Family

ID=16541688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20755683A Granted JPS60100451A (ja) 1983-11-07 1983-11-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60100451A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587838B1 (fr) * 1985-09-20 1987-11-27 Radiotechnique Compelec Procede pour aplanir la surface d'un dispositif semi-conducteur utilisant du nitrure de silicium comme materiau isolant
JPH029120A (ja) * 1988-06-28 1990-01-12 Tokuda Seisakusho Ltd 真空処理装置

Also Published As

Publication number Publication date
JPS60100451A (ja) 1985-06-04

Similar Documents

Publication Publication Date Title
US4634496A (en) Method for planarizing the surface of an interlayer insulating film in a semiconductor device
JPH0563940B2 (en])
JPS5893255A (ja) 半導体装置の製造方法
KR930001499B1 (ko) 반도체 장치의 제조방법
JPH0669351A (ja) 多層金属配線構造のコンタクトの製造方法
JPH0313744B2 (en])
JPH0220141B2 (en])
JPS607737A (ja) 半導体装置の製造方法
JP2716156B2 (ja) 半導体装置の製造方法
JPH04259241A (ja) 半導体装置の製造方法
JPS61287245A (ja) 多層配線法
JP2597424B2 (ja) 半導体装置の製造方法
JPS5874037A (ja) 半導体装置の製造方法
JPS5893328A (ja) 絶縁層の平担化方法
JPH06244286A (ja) 半導体装置の製造方法
JP2783898B2 (ja) 半導体装置の製造方法
JPH0587973B2 (en])
JP2787903B2 (ja) 半導体装置の製造方法
JPS5893330A (ja) 半導体装置の製造方法
JPS6358373B2 (en])
JPH03297134A (ja) パターン形成方法
JPS596560A (ja) 半導体装置の製造方法
JPH05259132A (ja) 半導体装置の製造方法
JPH04333235A (ja) 半導体集積回路の製造方法
JPH022619A (ja) 半導体装置の製造方法